Micron launches the first 1 γ DDR5 DRAM chip using EUV technology
Feb 26,2025
Micron Technology announced that it has started shipping 1 gamma (1-gamma) 16Gbit DDR5 DRAM chips to some ecosystem partners and customers.
Micron claims to be the first company to adopt a 1-gamma (1 γ) node, which refers to the sixth generation of DRAM process technology with a minimum geometric size between 19nm and 10nm. As DRAM manufacturers began manufacturing 10nm level DRAM, they abandoned nanoscale measurements and instead adopted 1x, 1y, 1z, now 1 α, 1 β, and 1 γ.
Thanks to Micron's previous leading advantage in 1 α and 1 β DRAM nodes, this new milestone in 1 γ DRAM node will drive innovative development of future computing platforms from cloud, industrial, and consumer applications to end-to-end AI devices such as AI PCs, smartphones, and automobiles. Meanwhile, by developing 1 gamma node in various manufacturing bases worldwide, Micron can provide the industry with more advanced technology and stronger supply resilience.
Micron claims to be the first company to adopt a 1-gamma (1 γ) node, which refers to the sixth generation of DRAM process technology with a minimum geometric size between 19nm and 10nm. As DRAM manufacturers began manufacturing 10nm level DRAM, they abandoned nanoscale measurements and instead adopted 1x, 1y, 1z, now 1 α, 1 β, and 1 γ.
Thanks to Micron's previous leading advantage in 1 α and 1 β DRAM nodes, this new milestone in 1 γ DRAM node will drive innovative development of future computing platforms from cloud, industrial, and consumer applications to end-to-end AI devices such as AI PCs, smartphones, and automobiles. Meanwhile, by developing 1 gamma node in various manufacturing bases worldwide, Micron can provide the industry with more advanced technology and stronger supply resilience.
Micron's 1 γ 16Gbit DDR5 DRAM is designed to provide a speed capability of up to 9200MT/s, which is 15% faster and over 20% lower in power consumption compared to its predecessor (16Gbit DDR5 implemented using 1 β technology).
Compared with the previous generation, the 1 γ node EUV technology has increased wafer capacity density output by 30%, which has improved Micron's economic benefits. However, unlike the 1 β node, it does require the use of extreme ultraviolet (EUV) lithography technology to depict finer features on silicon wafers using extremely short wavelengths. The memory also includes next-generation high-K metal gate CMOS technology, which enhances transistor performance, achieves higher rates, more optimized designs, and smaller feature sizes, thereby bringing dual advantages of power consumption reduction and performance expansion.
Scott DeBoer, Executive Vice President and Chief Technology and Product Officer of Micron, said, "With expertise in developing proprietary DRAM technology and strategic application of EUV lithography technology, Micron has created an advanced memory product portfolio based on 1 gamma nodes, helping to drive the development of the AI ecosystem. The 1 gamma DRAM nodes achieve higher capacity density output, demonstrating Micron's outstanding manufacturing strength and efficiency, and enabling us to expand the scale of memory supply to meet the growing demand of the industry
Micron plans to introduce 1 gamma across its entire DRAM series. This includes DDR5 for data centers, low-power DRAM for edge AI, DDR5 SODIMM for AI PCs, and LPDDR5X for mobile products and automobiles.
Micron stated that customers AMD and Intel have begun validating the use of 1 gamma DRAM in their servers and consumer processors.
Compared with the previous generation, the 1 γ node EUV technology has increased wafer capacity density output by 30%, which has improved Micron's economic benefits. However, unlike the 1 β node, it does require the use of extreme ultraviolet (EUV) lithography technology to depict finer features on silicon wafers using extremely short wavelengths. The memory also includes next-generation high-K metal gate CMOS technology, which enhances transistor performance, achieves higher rates, more optimized designs, and smaller feature sizes, thereby bringing dual advantages of power consumption reduction and performance expansion.
Scott DeBoer, Executive Vice President and Chief Technology and Product Officer of Micron, said, "With expertise in developing proprietary DRAM technology and strategic application of EUV lithography technology, Micron has created an advanced memory product portfolio based on 1 gamma nodes, helping to drive the development of the AI ecosystem. The 1 gamma DRAM nodes achieve higher capacity density output, demonstrating Micron's outstanding manufacturing strength and efficiency, and enabling us to expand the scale of memory supply to meet the growing demand of the industry
Micron plans to introduce 1 gamma across its entire DRAM series. This includes DDR5 for data centers, low-power DRAM for edge AI, DDR5 SODIMM for AI PCs, and LPDDR5X for mobile products and automobiles.
Micron stated that customers AMD and Intel have begun validating the use of 1 gamma DRAM in their servers and consumer processors.