SPB80P06PGATMA1 ImageInternational Rectifier (Infineon Technologies) Image may be representation.
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SPB80P06PGATMA1

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3846 pcs Stock
  • 1+$6.631
  • 10+$5.739
  • 30+$5.207
  • 100+$4.671
  • 500+$4.423
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Manufacturer Part Number : SPB80P06PGATMA1
RoHs Status : Lead free / RoHS Compliant
Manufacturer/Brand : International Rectifier (Infineon Technologies)
Stock Condition : 3846 pcs Stock
Description : MOSFET P-CH 60V 80A TO-263
Ship From : Hong Kong
Datasheets : SPB80P06PGATMA1.pdf
Shipment Way : DHL/Fedex/TNT/UPS/EMS

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Product Details

If you require a supply of SPB80P06PGATMA1 , then you've come to the right place! RX ELECTRONICS is pleased to offer our exceptional services to meet your needs.The SPB80P06PGATMA1 from Infineon Technologies is a high-performance Power MOSFET designed for efficient switching applications. It features a low RDS(on) of 15 mΩ at VGS = 10V, ensuring minimal conduction losses and enhancing system efficiency. The device supports a drain-source voltage (VDS) of 60V, making it suitable for various power management tasks. Its TO-252 (DPAK) package facilitates excellent thermal performance, enabling higher current handling capabilities.

Key advantages include fast switching speeds, reducing switching losses, and improving overall system reliability. The SPB80P06PGATMA1 also offers robust avalanche and ruggedness characteristics, ensuring reliable operation under harsh conditions. This MOSFET is ideal for automotive, industrial, and consumer electronics applications such as motor control, DC-DC converters, and battery management systems. Its compact size and superior electrical performance make it a preferred choice for designers aiming to optimize space and efficiency in their power designs.Request a quote SPB80P06PGATMA1 and leave your message at info@rxelectronics.com.
Part No. SPB80P06PGATMA1
Manufacturer International Rectifier (Infineon Technologies)
Description MOSFET P-CH 60V 80A TO-263
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 3846 pcs
Datasheets SPB80P06PGATMA1.pdf
Vgs(th) (Max) @ Id 4V @ 5.5mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package PG-TO263-3-2
Series SIPMOS®
Rds On (Max) @ Id, Vgs 23 mOhm @ 64A, 10V
Power Dissipation (Max) 340W (Tc)
Packaging Tape & Reel (TR)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names SP000096088
SPB80P06P G
SPB80P06P G-ND
SPB80P06PG
SPB80P06PGATMA1TR
SPB80P06PGINTR
SPB80P06PGINTR-ND
SPB80P06PGXT
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 5033pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 173nC @ 10V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 60V
Detailed Description P-Channel 60V 80A (Tc) 340W (Tc) Surface Mount PG-TO263-3-2
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
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Flat rate shipping is available for most orders except in cases where the weight exceeds 25lbs.  If you are in a remote area it may cost extra fees (35-50 USD) for delivery at those areas.

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Please feel free to reach us by email for more details or questions: Info@rxelectronics.com

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