Q2026367

Product Details

If you require a supply of Q2026367 , then you've come to the right place! RX ELECTRONICS is pleased to offer our exceptional services to meet your needs.The ON Semiconductor Q2026367 is a high-efficiency, automotive-grade N-channel MOSFET designed for low-voltage power switching applications. It features an ultra-low RDS(on) of 1.8 mΩ (typ.) at VGS = 10 V, enabling minimal conduction losses and enhanced thermal performance. Packaged in a thermally optimized PowerSO-8 package, it supports high current handling (ID up to 120 A) and robust avalanche energy rating (EAS = 420 mJ). The device meets AEC-Q101 reliability standards and offers fast switching speed with low gate charge (Qg = 52 nC), reducing driver losses. Its optimized body diode exhibits low reverse recovery charge (Qrr), improving efficiency in synchronous rectification and PWM circuits. Key advantages include superior power density, extended temperature operation (–55°C to +175°C), and reduced system footprint. Typical applications include automotive DC-DC converters, battery management systems (BMS), motor control modules, and e-fuse protection circuits.The price and lead time for Q2026367 depending on the quantity required, please send your request to us, our sales team will provide you price and delivery within 24 hours, we sincerely look forward to cooperating with you.