Manufacturer Part Number : | FQI6N60CTU |
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RoHs Status : | Lead free / RoHS Compliant |
Manufacturer/Brand : | AMI Semiconductor / ON Semiconductor |
Stock Condition : | 5655 pcs Stock |
Description : | MOSFET N-CH 600V 5.5A I2PAK |
Ship From : | Hong Kong |
Datasheets : | FQI6N60CTU.pdf |
Shipment Way : | DHL/Fedex/TNT/UPS/EMS |
Part No. | FQI6N60CTU |
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Manufacturer | AMI Semiconductor / ON Semiconductor |
Description | MOSFET N-CH 600V 5.5A I2PAK |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Quantity Available | 5655 pcs |
Datasheets | FQI6N60CTU.pdf |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | I2PAK (TO-262) |
Series | QFET® |
Rds On (Max) @ Id, Vgs | 2 Ohm @ 2.75A, 10V |
Power Dissipation (Max) | 125W (Tc) |
Packaging | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 600V |
Detailed Description | N-Channel 600V 5.5A (Tc) 125W (Tc) Through Hole I2PAK (TO-262) |
Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
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