| Channel Type |
N |
| Channel Mode |
Enhancement |
| Configuration |
Single |
| Maximum Drain-Source Voltage (V) |
30 |
| Maximum Continuous Drain Current (A) |
2.1 |
| Maximum Absolute Continuous Drain Current (A) |
2.1 |
| Maximum Gate-Source Voltage (V) |
±20 |
| Maximum Drain-Source Resistance (mOhm) |
100@10V |
| Typical Gate Charge @ Vgs (nC) |
3.2@10V |
| Breakdown Voltage Type |
DSS |
| Operating Junction Temperature (°C) |
-55 to 150 |
| Typical Gate Charge @ 10V (nC) |
3.2 |
| Maximum Power Dissipation (mW) |
690 |
| Process Technology |
0.8um to 3um |
| Minimum Gate Threshold Voltage (V) |
1 |
| Category |
Power MOSFET |
| Typical Output Capacitance (pF) |
100 |
| Maximum Junction Ambient Thermal Resistance (°C/W) |
400 |
| Maximum Positive Gate-Source Voltage (V) |
20 |
| Typical Input Capacitance @ Vds (pF) |
140@5V |
| Typical Gate Threshold Voltage (V) |
1.7 |
| Typical Reverse Transfer Capacitance @ Vds (pF) |
40@5V |
| Typical Diode Forward Voltage (V) |
0.8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) |
6 |
| Typical Turn-On Delay Time (ns) |
2.5 |
| Typical Turn-Off Delay Time (ns) |
16 |
| Typical Fall Time (ns) |
8 |
| Typical Rise Time (ns) |
1 |
| Maximum Gate-Source Leakage Current (nA) |
100 |
| Maximum Gate Threshold Voltage (V) |
2.4 |
| Maximum IDSS (uA) |
1 |
| Number of Elements per Chip |
1 |
| Minimum Storage Temperature (°C) |
-55 |
| Maximum Storage Temperature (°C) |
150 |
| Minimum Operating Temperature (°C) |
-55 |
| Maximum Operating Temperature (°C) |
150 |