MGSF1N03LT1G AMI Semiconductor / ON Semiconductor MOSFET N-CH 30V 1.6A SOT-23

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July 2th, 2026 62
MGSF1N03LT1G AMI Semiconductor / ON Semiconductor MOSFET N-CH 30V 1.6A SOT-23


• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT-23 Surface Mount Package Saves Board Space
• MV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free and are RoHS Compliant


CATALOG
MGSF1N03LT1G COUNTRY OF ORIGIN
MGSF1N03LT1G PARAMETRIC INFO
MGSF1N03LT1G PACKAGE INFO
MGSF1N03LT1G MANUFACTURING INFO
MGSF1N03LT1G PACKAGING INFO
MGSF1N03LT1G ECAD MODELS


COUNTRY OF ORIGIN
China
Czechia


PARAMETRIC INFO
Channel Type N
Channel Mode Enhancement
Configuration Single
Maximum Drain-Source Voltage (V) 30
Maximum Continuous Drain Current (A) 2.1
Maximum Absolute Continuous Drain Current (A) 2.1
Maximum Gate-Source Voltage (V) ±20
Maximum Drain-Source Resistance (mOhm) 100@10V
Typical Gate Charge @ Vgs (nC) 3.2@10V
Breakdown Voltage Type DSS
Operating Junction Temperature (°C) -55 to 150
Typical Gate Charge @ 10V (nC) 3.2
Maximum Power Dissipation (mW) 690
Process Technology 0.8um to 3um
Minimum Gate Threshold Voltage (V) 1
Category Power MOSFET
Typical Output Capacitance (pF) 100
Maximum Junction Ambient Thermal Resistance (°C/W) 400
Maximum Positive Gate-Source Voltage (V) 20
Typical Input Capacitance @ Vds (pF) 140@5V
Typical Gate Threshold Voltage (V) 1.7
Typical Reverse Transfer Capacitance @ Vds (pF) 40@5V
Typical Diode Forward Voltage (V) 0.8
Maximum Pulsed Drain Current @ TC=25°C (A) 6
Typical Turn-On Delay Time (ns) 2.5
Typical Turn-Off Delay Time (ns) 16
Typical Fall Time (ns) 8
Typical Rise Time (ns) 1
Maximum Gate-Source Leakage Current (nA) 100
Maximum Gate Threshold Voltage (V) 2.4
Maximum IDSS (uA) 1
Number of Elements per Chip 1
Minimum Storage Temperature (°C) -55
Maximum Storage Temperature (°C) 150
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
 

PACKAGE INFO
Supplier Package SOT-23
Basic Package Type Lead-Frame SMT
Pin Count 3
Lead Shape Gull-wing
PCB 3
Tab N/R
Pin Pitch (mm) 0.95
Package Length (mm) 2.9
Package Width (mm) 1.3
Package Height (mm) 0.94
Package Diameter (mm) N/R
Package Overall Length (mm) 2.9
Package Overall Width (mm) 2.4
Package Overall Height (mm) 1
Seated Plane Height (mm) 1
Mounting Surface Mount
Terminal Width (mm) 0.44
Package Weight (g) N/A
Package Material Plastic
Package Description Small Outline Transistor
Package Family Name SOT
Jedec TO-236AB
Package Outline Link to Datasheet
Maximum PACKAGE_DIMENSION_H (mm) 1.01
Minimum PACKAGE_DIMENSION_H (mm) 0.88
Maximum PACKAGE_DIMENSION_L (mm) 3.04
Minimum PACKAGE_DIMENSION_L (mm) 2.8
Maximum PACKAGE_DIMENSION_W (mm) 1.4
Minimum PACKAGE_DIMENSION_W (mm) 1.2
Maximum Diameter (mm) N/R
Minimum Diameter (mm) N/R
Maximum Seated_Plane_Height (mm) 1.11
Minimum Seated_Plane_Height (mm) 0.89
 

MANUFACTURING INFO
MSL 1
Maximum Reflow Temperature (°C) 260
Reflow Solder Time (Sec) 30
Number of Reflow Cycle 3
Standard N/A
Reflow Temp. Source Link to Datasheet
Maximum Wave Temperature (°C) N/R
Wave Solder Time (Sec) N/R
Wave Temp. Source Link to Datasheet
Lead Finish(Plating) Matte Sn annealed
Under Plating Material N/A
Terminal Base Material FeNi Alloy
Shelf Life Period 2 Years
Shelf Life Condition 8°C to 30°C+30 % to 70 % RH
Number of Wave Cycles N/R
 

PACKAGING INFO
Packaging Suffix T1
Packaging Tape and Reel
Quantity Of Packaging 3000
Reel Diameter (in) 7
Reel Width (mm) 8.4(Min)
Tape Pitch (mm) 4
Tape Width (mm) 8
Feed Hole Pitch (mm) 4
Hole Center to Component Center (mm) 2
Component Orientation Single Pin At Sprocket Hole
Packaging Document Link to Datasheet
Tape Type Embossed
 

ECAD MODELS



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